W632GU6NB-11 TR
Winbond Electronics
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, 933M
$4.62
Available to order
Reference Price (USD)
1+
$4.62000
500+
$4.5738
1000+
$4.5276
1500+
$4.4814
2000+
$4.4352
2500+
$4.389
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W632GU6NB-11 TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W632GU6NB-11 TR
$4.62
Product details
Enhance your system's performance with the W632GU6NB-11 TR memory IC from Winbond Electronics, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The W632GU6NB-11 TR boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The W632GU6NB-11 TR also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the W632GU6NB-11 TR and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Winbond Electronics memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-VFBGA (7.5x13)
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