W66CP2NQUAGJ TR
Winbond Electronics
Winbond Electronics
4GB LPDDR4, DDP, X32, 1866MHZ, -
$7.59
Available to order
Reference Price (USD)
1+
$7.59000
500+
$7.5141
1000+
$7.4382
1500+
$7.3623
2000+
$7.2864
2500+
$7.2105
Exquisite packaging
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Winbond Electronics W66CP2NQUAGJ TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W66CP2NQUAGJ TR
$7.59
Product details
The W66CP2NQUAGJ TR by Winbond Electronics represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The W66CP2NQUAGJ TR demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The W66CP2NQUAGJ TR also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Winbond Electronics memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the W66CP2NQUAGJ TR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gb (128M x 32)
- Memory Interface: LVSTL_11
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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