W978H2KBVX2E TR
Winbond Electronics
Winbond Electronics
256MB LPDDR2, X32, 400MHZ, -25 ~
$4.26
Available to order
Reference Price (USD)
1+
$4.26000
500+
$4.2174
1000+
$4.1748
1500+
$4.1322
2000+
$4.0896
2500+
$4.047
Exquisite packaging
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| EMS | 3-7 days |
Winbond Electronics W978H2KBVX2E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W978H2KBVX2E TR
$4.26
Product details
Introducing the W978H2KBVX2E TR from Winbond Electronics, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The W978H2KBVX2E TR incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The W978H2KBVX2E TR also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Winbond Electronics memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the W978H2KBVX2E TR to ensure successful implementation in your design.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 256Mb (8M x 32)
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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