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GTVA101K42EV-V1-R250

Wolfspeed, Inc.
GTVA101K42EV-V1-R250 Preview
Wolfspeed, Inc.
GAN HEMT 50V 1400W 0.96-1.4GHZ
$1,091.11
Available to order
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$1091.11248
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$1080.2013552
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$1069.2902304
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$1058.3791056
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$1047.4679808
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$1036.556856
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Wolfspeed, Inc. GTVA101K42EV-V1-R250 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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GTVA101K42EV-V1-R250

GTVA101K42EV-V1-R250

$1,091.11

Product details

The GTVA101K42EV-V1-R250 from Wolfspeed, Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The GTVA101K42EV-V1-R250 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the GTVA101K42EV-V1-R250 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The GTVA101K42EV-V1-R250 provides reliable and accurate signal processing in all scenarios. Wolfspeed, Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the GTVA101K42EV-V1-R250 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the GTVA101K42EV-V1-R250 from Wolfspeed, Inc. for exceptional RF performance.

General specs

  • Product Status: Active
  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 1400W
  • Voltage - Rated: 125 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4

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