GTVA212701FA-V2-R2
Wolfspeed, Inc.
Wolfspeed, Inc.
270W, GAN HEMT, 48V, 2110-2200MH
$136.83
Available to order
Reference Price (USD)
1+
$136.83200
500+
$135.46368
1000+
$134.09536
1500+
$132.72704
2000+
$131.35872
2500+
$129.9904
Exquisite packaging
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GTVA212701FA-V2-R2
$136.83
Product details
Optimize your RF applications with the GTVA212701FA-V2-R2 RF MOSFET transistor from Wolfspeed, Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The GTVA212701FA-V2-R2 handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The GTVA212701FA-V2-R2 is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The GTVA212701FA-V2-R2 ensures consistent operation across various frequencies. Wolfspeed, Inc. has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the GTVA212701FA-V2-R2 is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the GTVA212701FA-V2-R2 from Wolfspeed, Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 19dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 320 mA
- Power - Output: 270W
- Voltage - Rated: 125 V
- Package / Case: H-87265J-2
- Supplier Device Package: H-87265J-2
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