BC857BS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
PNP+PNP TRANS 45V 0.2A SOT-363
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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BC857BS-F2-0000HF
$0.21
Product details
The BC857BS-F2-0000HF from Yangzhou Yangjie Electronic Technology Co.,Ltd redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The BC857BS-F2-0000HF features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The BC857BS-F2-0000HF is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The BC857BS-F2-0000HF also plays vital roles in advanced communication systems. Yangzhou Yangjie Electronic Technology Co.,Ltd has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The BC857BS-F2-0000HF represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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