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YJQ35N04A-F1-1100HF

Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ35N04A-F1-1100HF Preview
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 40V 35A DFN3333-8L
$0.67
Available to order
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YJQ35N04A-F1-1100HF

YJQ35N04A-F1-1100HF

$0.67

Product details

Enhance your electronic designs with the YJQ35N04A-F1-1100HF single MOSFET transistor from Yangzhou Yangjie Electronic Technology Co.,Ltd, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The YJQ35N04A-F1-1100HF features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the YJQ35N04A-F1-1100HF particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the YJQ35N04A-F1-1100HF represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3.3x3.3)
  • Package / Case: 8-PowerVDFN

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