Infineon Advances GaN Leadership with Scalable 300mm Wafer Manufacturing Milestone

As global demand for gallium nitride (GaN) semiconductors accelerates, Infineon Technologies AG is strategically positioned to harness this growth and further establish its dominance as a leading Integrated Device Manufacturer (IDM) in the GaN market. The company has announced that its scalable GaN production on 300-millimeter wafers is progressing according to plan. With initial customer samples expected in the fourth quarter of 2025, Infineon is primed to broaden its customer base and reinforce its standing as a key player in next-generation power semiconductor solutions.

As a power systems leader, Infineon is uniquely positioned with expertise across all three essential semiconductor materials: silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). GaN-based devices offer superior power density, faster switching performance, and reduced energy losses. These attributes enable more compact electronic designs and decrease both energy consumption and heat dissipation, making GaN ideal for use in a range of advanced technologies, including smartphone chargers, solar inverters, industrial automation, and humanoid robotics.

Infineon’s approach is rooted in its IDM business model, which encompasses the complete semiconductor lifecycle—from initial design through to manufacturing and sales. This vertically integrated strategy sets the company apart, providing key benefits such as enhanced quality control, accelerated time-to-market, and greater design flexibility. The company’s commitment to in-house production ensures it can effectively scale to meet rising customer demand for reliable and efficient GaN power solutions.

In a significant technological breakthrough, Infineon has become the first semiconductor company to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure. Transitioning to 300mm wafers represents a substantial leap in manufacturing efficiency and technical sophistication, offering a 2.3-fold increase in chip output per wafer compared to traditional 200mm wafers. This advancement not only enhances production scalability but also strengthens Infineon’s capacity to serve diverse markets.

The expanded capabilities are particularly critical as GaN adoption gains momentum across a wide range of sectors, including industrial, automotive, consumer electronics, computing, and communications. Applications span from AI system power supplies and motor control systems to solar energy systems, chargers, and adapters. Infineon’s progress is further supported by its extensive GaN expert team and the industry’s most comprehensive GaN intellectual property portfolio, enabling the company to deliver cutting-edge solutions tailored to emerging high-performance power needs.