BLP10H660PY
Ampleon USA Inc.
Ampleon USA Inc.
RF MOSFET LDMOS 50V 4-HSOPF
$59.62
Available to order
Reference Price (USD)
100+
$53.72420
Exquisite packaging
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BLP10H660PY
$59.62
Product details
Upgrade your RF systems with the BLP10H660PY RF MOSFET transistor from Ampleon USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The BLP10H660PY offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the BLP10H660PY ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The BLP10H660PY ensures accurate and stable signal processing in all scenarios. Ampleon USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the BLP10H660PY is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the BLP10H660PY from Ampleon USA Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1GHz
- Gain: 18dB
- Voltage - Test: 50 V
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 60W
- Voltage - Rated: 110 V
- Package / Case: SOT-1223-2
- Supplier Device Package: 4-HSOPF
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