HGTH12N40E1D
Harris Corporation
Harris Corporation
12A, 400V, N-CHANNEL IGBT
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HGTH12N40E1D
$0.00
Product details
The HGTH12N40E1D from Harris Corporation is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the HGTH12N40E1D ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the HGTH12N40E1D for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 17.5 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package: TO-218 Isolated
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