HGTP10N40E1D
Harris Corporation
Harris Corporation
17.5A, 400V, N-CHANNEL IGBT
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HGTP10N40E1D
$0.00
Product details
Maximize power efficiency with the HGTP10N40E1D single IGBT transistor by Harris Corporation. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The HGTP10N40E1D features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the HGTP10N40E1D delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 17.5 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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