MRF8P20165WHSR5
Freescale Semiconductor
Freescale Semiconductor
FET RF 2CH 65V 2.01GHZ NI780S4
$117.66
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$111.04860
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MRF8P20165WHSR5
$117.66
Product details
Maximize your RF capabilities with the MRF8P20165WHSR5 RF MOSFET transistor from Freescale Semiconductor, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MRF8P20165WHSR5 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The MRF8P20165WHSR5 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The MRF8P20165WHSR5 ensures consistent operation across a wide frequency range. Freescale Semiconductor has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the MRF8P20165WHSR5 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the MRF8P20165WHSR5 from Freescale Semiconductor for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.88GHz ~ 2.025GHz
- Gain: 14.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 37W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-4
- Supplier Device Package: NI-780S-4
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