MRFE6S9160HSR3
Freescale Semiconductor
Freescale Semiconductor
RF ULTRA HIGH FREQUENCY BAND, N-
$126.30
Available to order
Reference Price (USD)
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$126.30000
500+
$125.037
1000+
$123.774
1500+
$122.511
2000+
$121.248
2500+
$119.985
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MRFE6S9160HSR3
$126.30
Product details
The MRFE6S9160HSR3 from Freescale Semiconductor is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The MRFE6S9160HSR3 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the MRFE6S9160HSR3 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The MRFE6S9160HSR3 provides reliable and accurate signal processing in all scenarios. Freescale Semiconductor has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the MRFE6S9160HSR3 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the MRFE6S9160HSR3 from Freescale Semiconductor for exceptional RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 35W
- Voltage - Rated: 66 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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