ZX5T851GQTC
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT223 T&
$0.16
Available to order
Reference Price (USD)
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$0.16430
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$0.162657
1000+
$0.161014
1500+
$0.159371
2000+
$0.157728
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$0.156085
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ZX5T851GQTC
$0.16
Product details
Discover the ZX5T851GQTC, a high-efficiency Bipolar Junction Transistor from Diodes Incorporated designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The ZX5T851GQTC demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the ZX5T851GQTC simplifies circuit design challenges. Diodes Incorporated's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1.2 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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