GA35XCP12-247
GeneSiC Semiconductor
GeneSiC Semiconductor
IGBT 1200V SOT247
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GA35XCP12-247
$0.00
Product details
Enhance your power control systems with the GA35XCP12-247 single IGBT transistor from GeneSiC Semiconductor. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The GA35XCP12-247 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the GA35XCP12-247 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 35 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A
- Power - Max: -
- Switching Energy: 2.66mJ (on), 4.35mJ (off)
- Input Type: Standard
- Gate Charge: 50 nC
- Td (on/off) @ 25°C: -
- Test Condition: 800V, 35A, 22Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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