Shopping cart

Subtotal: $0.00

IPB19DP10NMATMA1

Infineon Technologies
IPB19DP10NMATMA1 Preview
Infineon Technologies
TRENCH >=100V PG-TO263-3
$2.56
Available to order
Reference Price (USD)
1+
$2.56000
500+
$2.5344
1000+
$2.5088
1500+
$2.4832
2000+
$2.4576
2500+
$2.432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPB19DP10NMATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPB19DP10NMATMA1

IPB19DP10NMATMA1

$2.56

Product details

Infineon Technologies presents the IPB19DP10NMATMA1, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The IPB19DP10NMATMA1 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The IPB19DP10NMATMA1 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.04mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Vishay Siliconix

SQ4483EY-T1_BE3

$0.00 (not set)
Toshiba Semiconductor and Storage

TPHR7904PB,L1XHQ

$0.00 (not set)
IXYS

IXFX32N100Q3

$0.00 (not set)
Infineon Technologies

IRLML2246TRPBF

$0.00 (not set)
STMicroelectronics

STFW40N60M2

$0.00 (not set)
Microchip Technology

APT11F80B

$0.00 (not set)
Microchip Technology

APT18M80B

$0.00 (not set)
Fairchild Semiconductor

ISL9N303AS3

$0.00 (not set)
onsemi

NTTFS6H850NLTAG

$0.00 (not set)
Infineon Technologies

IPP60R022S7XKSA1

$0.00 (not set)
Top