IRG8CH15K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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IRG8CH15K10F
$0.00
Product details
Upgrade your power electronics with the IRG8CH15K10F single IGBT transistor from Infineon Technologies. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The IRG8CH15K10F features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the IRG8CH15K10F delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 15ns/170ns
- Test Condition: 600V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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