IRG8CH20K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG8CH20K10F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IRG8CH20K10F
$0.00
Product details
The IRG8CH20K10F from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the IRG8CH20K10F ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the IRG8CH20K10F for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 20ns/170ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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