IRG8P15N120KD-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A TO247AD
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IRG8P15N120KD-EPBF
$0.00
Product details
Experience unparalleled power control with the IRG8P15N120KD-EPBF single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IRG8P15N120KD-EPBF boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IRG8P15N120KD-EPBF offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 125 W
- Switching Energy: 600µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 98 nC
- Td (on/off) @ 25°C: 15ns/170ns
- Test Condition: 600V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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