IRGSL4B60KD1PBF
Infineon Technologies
Infineon Technologies
IGBT NPT 600V 11A TO262
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IRGSL4B60KD1PBF
$0.00
Product details
The IRGSL4B60KD1PBF from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the IRGSL4B60KD1PBF ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the IRGSL4B60KD1PBF and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 22 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 63 W
- Switching Energy: 73µJ (on), 47µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: 22ns/100ns
- Test Condition: 400V, 4A, 100Ohm, 15V
- Reverse Recovery Time (trr): 93 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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