PTFA091201FV4XWSA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 120W H-37248-2
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PTFA091201FV4XWSA1
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Product details
Optimize your RF applications with the PTFA091201FV4XWSA1 RF MOSFET transistor from Infineon Technologies, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The PTFA091201FV4XWSA1 handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The PTFA091201FV4XWSA1 is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The PTFA091201FV4XWSA1 ensures consistent operation across various frequencies. Infineon Technologies has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the PTFA091201FV4XWSA1 is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the PTFA091201FV4XWSA1 from Infineon Technologies for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 110W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37248-2
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