SIGC76T65R3EX1SA1
Infineon Technologies
Infineon Technologies
IGBT CHIP
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SIGC76T65R3EX1SA1
$0.00
Product details
The SIGC76T65R3EX1SA1 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the SIGC76T65R3EX1SA1 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the SIGC76T65R3EX1SA1 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 1.2V @ 15V, 45A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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