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IXGJ40N60C2D1

IXYS
IXGJ40N60C2D1 Preview
IXYS
IGBT 600V 75A 300W TO268
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IXYS IXGJ40N60C2D1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IXGJ40N60C2D1

IXGJ40N60C2D1

$0.00

Product details

The IXGJ40N60C2D1 by IXYS is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IXGJ40N60C2D1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IXGJ40N60C2D1 and experience unmatched performance. Contact us today for more details and pricing options.

General specs

  • Product Status: Obsolete
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 300 W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3, Short Tab
  • Supplier Device Package: TO-268

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