IXGT32N90B2D1
IXYS
IXYS
IGBT 900V 64A 300W TO268
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30+
$6.45767
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IXGT32N90B2D1
$0.00
Product details
The IXGT32N90B2D1 from IXYS is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IXGT32N90B2D1 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IXGT32N90B2D1 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
- Power - Max: 300 W
- Switching Energy: 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 89 nC
- Td (on/off) @ 25°C: 20ns/260ns
- Test Condition: 720V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): 190 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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