FGA50N100BNTD2
onsemi
onsemi
IGBT 1000V 50A 156W TO3P
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$8.81000
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$7.98500
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FGA50N100BNTD2
$0.00
Product details
Enhance your power control systems with the FGA50N100BNTD2 single IGBT transistor from onsemi. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The FGA50N100BNTD2 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the FGA50N100BNTD2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 156 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 257 nC
- Td (on/off) @ 25°C: 34ns/243ns
- Test Condition: 600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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