IXSH25N120AU1
IXYS
IXYS
IGBT 1200V 50A 200W TO247
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IXSH25N120AU1
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Product details
The IXSH25N120AU1 by IXYS is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IXSH25N120AU1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IXSH25N120AU1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 200 W
- Switching Energy: 9.6mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 100ns/450ns
- Test Condition: 960V, 25A, 18Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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