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IXTA32P05T-TRL

IXYS
IXTA32P05T-TRL Preview
IXYS
MOSFET P-CH 50V 32A TO263
$1.82
Available to order
Reference Price (USD)
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$1.82144
500+
$1.8032256
1000+
$1.7850112
1500+
$1.7667968
2000+
$1.7485824
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$1.730368
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IXYS IXTA32P05T-TRL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IXTA32P05T-TRL

IXTA32P05T-TRL

$1.82

Product details

The IXTA32P05T-TRL from IXYS is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the IXTA32P05T-TRL provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The IXTA32P05T-TRL finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the IXTA32P05T-TRL and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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