APT75GN60B2DQ3G
Microsemi Corporation
Microsemi Corporation
IGBT 600V 155A 536W TO264
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APT75GN60B2DQ3G
$0.00
Product details
The APT75GN60B2DQ3G from Microsemi Corporation is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the APT75GN60B2DQ3G ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the APT75GN60B2DQ3G and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 155 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
- Power - Max: 536 W
- Switching Energy: 2500µJ (on), 2140µJ (off)
- Input Type: Standard
- Gate Charge: 485 nC
- Td (on/off) @ 25°C: 47ns/385ns
- Test Condition: 400V, 75A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: -
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