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NTE199

NTE Electronics, Inc
NTE199 Preview
NTE Electronics, Inc
TRANS NPN 50V 0.1A TO92
$1.17
Available to order
Reference Price (USD)
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$1.17000
500+
$1.1583
1000+
$1.1466
1500+
$1.1349
2000+
$1.1232
2500+
$1.1115
Exquisite packaging
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NTE Electronics, Inc NTE199 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NTE199

NTE199

$1.17

Product details

Optimize your circuit performance with the NTE199, a precision Bipolar Junction Transistor from NTE Electronics, Inc. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The NTE199 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NTE Electronics, Inc employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The NTE199 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92

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