AFV121KHR5
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$999.95
Available to order
Reference Price (USD)
50+
$522.61020
Exquisite packaging
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AFV121KHR5
$999.95
Product details
The AFV121KHR5 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the AFV121KHR5 delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The AFV121KHR5 is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The AFV121KHR5 is a versatile solution for modern electronic systems requiring high-frequency operation. Trust NXP USA Inc. for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the AFV121KHR5 suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The AFV121KHR5 ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the AFV121KHR5 is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the AFV121KHR5 from NXP USA Inc..
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 960MHz ~ 1.22GHz
- Gain: 19.6dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 1000W
- Voltage - Rated: 112 V
- Package / Case: SOT-979A
- Supplier Device Package: NI-1230-4H
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