MRFE6VP61K25GSR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 133V 230MHZ NI1230GS
$416.22
Available to order
Reference Price (USD)
50+
$159.75960
Exquisite packaging
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MRFE6VP61K25GSR5
$416.22
Product details
Optimize your RF applications with the MRFE6VP61K25GSR5 RF MOSFET transistor from NXP USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MRFE6VP61K25GSR5 handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The MRFE6VP61K25GSR5 is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The MRFE6VP61K25GSR5 ensures consistent operation across various frequencies. NXP USA Inc. has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the MRFE6VP61K25GSR5 is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the MRFE6VP61K25GSR5 from NXP USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 230MHz
- Gain: 24dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 1250W
- Voltage - Rated: 133 V
- Package / Case: NI-1230S-4 GW
- Supplier Device Package: NI-1230S-4 GULL
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