HGTG12N60A4D
onsemi
onsemi
IGBT 600V 54A 167W TO247
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Reference Price (USD)
1+
$3.78000
10+
$3.39100
450+
$2.63598
900+
$2.36526
1,350+
$1.99479
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HGTG12N60A4D
$0.00
Product details
The HGTG12N60A4D from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the HGTG12N60A4D ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the HGTG12N60A4D for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 17ns/96ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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