HGTP2N120CN
onsemi
onsemi
IGBT 1200V 13A 104W TO220AB
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HGTP2N120CN
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Product details
Optimize your power electronics with the HGTP2N120CN single IGBT transistor from onsemi. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The HGTP2N120CN is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the HGTP2N120CN can enhance your next project request a quote now.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
- Power - Max: 104 W
- Switching Energy: 96µJ (on), 355µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 25ns/205ns
- Test Condition: 960V, 2.6A, 51Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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