Shopping cart

Subtotal: $0.00

MMBTA13LT3G

onsemi
MMBTA13LT3G Preview
onsemi
TRANS NPN DARL 30V 0.3A SOT23-3
$0.21
Available to order
Reference Price (USD)
10,000+
$0.03022
30,000+
$0.02732
50,000+
$0.02443
100,000+
$0.02298
250,000+
$0.02056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi MMBTA13LT3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MMBTA13LT3G

MMBTA13LT3G

$0.21

Product details

Experience superior semiconductor performance with the MMBTA13LT3G, a high-efficiency Bipolar Junction Transistor from onsemi. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The MMBTA13LT3G demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. onsemi produces the MMBTA13LT3G using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the MMBTA13LT3G stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 225 mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)

Viewed products

Comchip Technology

AS9013-H-HF

$0.00 (not set)
Diotec Semiconductor

BC547BBK

$0.00 (not set)
onsemi

2SC3648S-TD-E

$0.00 (not set)
Diotec Semiconductor

BC850A-AQ

$0.00 (not set)
Panjit International Inc.

BC857B-AU_R1_000A1

$0.00 (not set)
Diodes Incorporated

FMMT717QTA

$0.00 (not set)
STMicroelectronics

ST13003D-K

$0.00 (not set)
onsemi

KSE44H11

$0.00 (not set)
NTE Electronics, Inc

2N6052

$0.00 (not set)
onsemi

NSS20501UW3T2G

$0.00 (not set)
Top