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DME50C010R

Panasonic Electronic Components
DME50C010R Preview
Panasonic Electronic Components
TRANS NPN/PNP DARL 50V SMINI5
$0.43
Available to order
Reference Price (USD)
3,000+
$0.11660
6,000+
$0.10953
15,000+
$0.10246
30,000+
$0.09422
Exquisite packaging
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DME50C010R

DME50C010R

$0.43

Product details

The DME50C010R from Panasonic Electronic Components sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The DME50C010R features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The DME50C010R is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The DME50C010R also finds use in sophisticated RF amplification circuits. Panasonic Electronic Components has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the DME50C010R for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN, PNP Complementary Darlington
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: SMini5-F3-B

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