RJH1CV7DPK-00#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 1200V 70A 320W TO-3P
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$7.22000
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$6.44700
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$5.80240
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RJH1CV7DPK-00#T0
$0.00
Product details
Experience unparalleled power control with the RJH1CV7DPK-00#T0 single IGBT transistor by Renesas Electronics America Inc. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RJH1CV7DPK-00#T0 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RJH1CV7DPK-00#T0 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
- Power - Max: 320 W
- Switching Energy: 3.2mJ (on), 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 53ns/185ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P
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