RJH60F0DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 50A 201.6W TO-247A
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RJH60F0DPQ-A0#T0
$0.00
Product details
The RJH60F0DPQ-A0#T0 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RJH60F0DPQ-A0#T0 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RJH60F0DPQ-A0#T0 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
- Power - Max: 201.6 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 46ns/70ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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