GT50J121(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 50A 240W TO3P LH
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GT50J121(Q)
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Product details
The GT50J121(Q) from Toshiba Semiconductor and Storage is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the GT50J121(Q) ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the GT50J121(Q) for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Power - Max: 240 W
- Switching Energy: 1.3mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 50A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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