GT60N321(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
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GT60N321(Q)
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Product details
Experience unparalleled power control with the GT60N321(Q) single IGBT transistor by Toshiba Semiconductor and Storage. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The GT60N321(Q) boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the GT60N321(Q) offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
- Power - Max: 170 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 330ns/700ns
- Test Condition: -
- Reverse Recovery Time (trr): 2.5 µs
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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