Shopping cart

Subtotal: $0.00

SI7110DN-T1-GE3

Vishay Siliconix
SI7110DN-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 20V 13.5A PPAK1212-8
$2.27
Available to order
Reference Price (USD)
3,000+
$1.10950
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SI7110DN-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SI7110DN-T1-GE3

SI7110DN-T1-GE3

$2.27

Product details

The SI7110DN-T1-GE3 from Vishay Siliconix is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the SI7110DN-T1-GE3 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The SI7110DN-T1-GE3 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the SI7110DN-T1-GE3 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8

Viewed products

Toshiba Semiconductor and Storage

TK35S04K3L(T6L1,NQ

$0.00 (not set)
Vishay Siliconix

SI2392ADS-T1-GE3

$0.00 (not set)
Infineon Technologies

BUZ30AH3045AATMA1

$0.00 (not set)
STMicroelectronics

STL4N80K5

$0.00 (not set)
EPC Space, LLC

FBG10N05AC

$0.00 (not set)
STMicroelectronics

STW57N65M5-4

$0.00 (not set)
IXYS

IXFH150N15P

$0.00 (not set)
STMicroelectronics

STD155N3H6

$0.00 (not set)
Infineon Technologies

IRLZ44NPBF

$0.00 (not set)
NXP USA Inc.

BUK968R3-40E,118

$0.00 (not set)
Top