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CG2H40010P

Wolfspeed, Inc.
CG2H40010P Preview
Wolfspeed, Inc.
10W, GAN HEMT, 28V, DC-4.0GHZ, P
$58.51
Available to order
Reference Price (USD)
1+
$58.50672
500+
$57.9216528
1000+
$57.3365856
1500+
$56.7515184
2000+
$56.1664512
2500+
$55.581384
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Wolfspeed, Inc. CG2H40010P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CG2H40010P

CG2H40010P

$58.51

Product details

Discover the CG2H40010P RF MOSFET transistor from Wolfspeed, Inc., a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The CG2H40010P is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The CG2H40010P is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The CG2H40010P delivers consistent performance across a wide range of frequencies. Wolfspeed, Inc. has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the CG2H40010P is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the CG2H40010P from Wolfspeed, Inc. for all your RF needs.

General specs

  • Product Status: Active
  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 16.7dB
  • Voltage - Test: 28 V
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 10W
  • Voltage - Rated: 120 V
  • Package / Case: 440196
  • Supplier Device Package: 440196

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