IGP03N120H2
Infineon Technologies
Infineon Technologies
IGBT, 9.6A, 1200V, N-CHANNEL
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IGP03N120H2
$0.00
Product details
The IGP03N120H2 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the IGP03N120H2 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the IGP03N120H2 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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