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IXER35N120D1

IXYS
IXER35N120D1 Preview
IXYS
IGBT 1200V 50A 200W TO247
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IXER35N120D1

IXER35N120D1

$0.00

Product details

Upgrade your power electronics with the IXER35N120D1 single IGBT transistor from IXYS. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The IXER35N120D1 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the IXER35N120D1 delivers consistent performance. Contact us today for more details and pricing information.

General specs

  • Product Status: Obsolete
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
  • Power - Max: 200 W
  • Switching Energy: 5.4mJ (on), 2.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 35A, 39Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247™

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