IRG8CH29K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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IRG8CH29K10F
$0.00
Product details
Enhance your power control systems with the IRG8CH29K10F single IGBT transistor from Infineon Technologies. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The IRG8CH29K10F is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the IRG8CH29K10F offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 40ns/245ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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