PTFA261301E V1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 130W H-30260-2
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PTFA261301E V1
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Product details
The PTFA261301E V1 from Infineon Technologies is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The PTFA261301E V1 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the PTFA261301E V1 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The PTFA261301E V1 provides reliable and accurate signal processing in all scenarios. Infineon Technologies has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the PTFA261301E V1 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the PTFA261301E V1 from Infineon Technologies for exceptional RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.68GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 130W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30260-2
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