SIGC121T60NR2CX1SA3
Infineon Technologies
Infineon Technologies
IGBT 3 CHIP 600V WAFER
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SIGC121T60NR2CX1SA3
$0.00
Product details
The SIGC121T60NR2CX1SA3 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the SIGC121T60NR2CX1SA3 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the SIGC121T60NR2CX1SA3 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 125ns/225ns
- Test Condition: 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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