APT45GR65B2DU30
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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$7.24533
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APT45GR65B2DU30
$0.00
Product details
Experience unparalleled power control with the APT45GR65B2DU30 single IGBT transistor by Microsemi Corporation. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The APT45GR65B2DU30 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the APT45GR65B2DU30 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 118 A
- Current - Collector Pulsed (Icm): 224 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 543 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 15ns/100ns
- Test Condition: 433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™ [B2]
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