APT45GR65SSCD10
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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APT45GR65SSCD10
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Product details
Upgrade your power electronics with the APT45GR65SSCD10 single IGBT transistor from Microsemi Corporation. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The APT45GR65SSCD10 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the APT45GR65SSCD10 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 118 A
- Current - Collector Pulsed (Icm): 224 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 543 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 15ns/100ns
- Test Condition: 433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D3Pak
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