HGTD7N60C3S
Harris Corporation
Harris Corporation
600 V, 14 A, N-CHANNEL IGBT
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HGTD7N60C3S
$0.00
Product details
Experience unparalleled power control with the HGTD7N60C3S single IGBT transistor by Harris Corporation. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The HGTD7N60C3S boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the HGTD7N60C3S offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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