IGC13T120T8LX1SA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 10A SAWN ON FOIL
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$3.00000
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IGC13T120T8LX1SA1
$0.00
Product details
The IGC13T120T8LX1SA1 from Infineon Technologies is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the IGC13T120T8LX1SA1 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the IGC13T120T8LX1SA1 for your next project request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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